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A study of contact properties between molybdenum and amorphous silicon tin oxide thin film transistors
Author(s) -
Ning Honglong,
Liu Xianzhe,
Xu Hua,
Lu Kuankuan,
Zhang Hongke,
Zhang Xiaochen,
Yao Rihui,
Fang Zhiqiang,
Wang Xiaofeng,
Peng Junbiao
Publication year - 2018
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.735
Subject(s) - materials science , thin film transistor , annealing (glass) , amorphous solid , silicon , oxide thin film transistor , molybdenum , transmission electron microscopy , thin film , oxide , tin , layer (electronics) , electrode , amorphous silicon , optoelectronics , nanotechnology , composite material , metallurgy , crystalline silicon , crystallography , chemistry
Amorphous silicon tin oxide (a‐STO) semiconductor is of increasing interest for fabricating thin film transistor. The contact properties of Mo source/drain electrode to a‐STO film subjected to different thermal annealing processes was investigated. The formation of molybdenum oxide interlayer between Mo and a‐STO film annealed in air ambient was confirmed by cross‐sectional transmission electron microscopy image, and the interlayer was formed by getting oxygen from a‐STO film in air annealing process. The formation of molybdenum oxide interlayer could provide not only an adhesive layer but also an intermediate barrier layer, and it hindered Mo atoms diffuse into a‐STO film, which would form a good quality of contact interface and facilitate the electron injection from Mo electrode into a‐STO film.