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Characterization of electronic displays using CMOS single‐photon avalanche diode image sensors
Author(s) -
Mai Hanning,
Gyongy Istvan,
Dutton Neale A.W.,
Henderson Robert K.,
Underwood Ian
Publication year - 2018
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.661
Subject(s) - avalanche diode , single photon avalanche diode , optoelectronics , diode , materials science , cmos , pixel , luminance , semiconductor , image sensor , optics , light emitting diode , photon , oled , avalanche photodiode , physics , detector , nanotechnology , breakdown voltage , voltage , layer (electronics) , quantum mechanics
Advanced complementary metal‐oxide semiconductor‐compatible single‐photon avalanche diode array technology is progressing rapidly and is being deployed in a wide range of applications. We report for the first time the use of a complementary metal‐oxide semiconductor‐compatible single‐photon avalanche diode array to perform detailed optical measurements on pixels of an organic light‐emitting diode microdisplay at very high sampling rate, very low light level, and over a very wide dynamic range of luminance. This offers a clear demonstration of the huge potential of this single‐photon avalanche diode technology to reveal hitherto obscure details of the optical characteristics of individual and groups of organic light‐emitting diode pixels.