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Transparent AMOLED display driven by split oxide TFT backplane
Author(s) -
Lee Suhui,
Chen Yuanfeng,
Kim Jeonggi,
Kim HyoMin,
Jang Jin
Publication year - 2018
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.646
Subject(s) - thin film transistor , amoled , materials science , active matrix , backplane , oxide thin film transistor , optoelectronics , active layer , amorphous solid , oled , transistor , oxide , diode , layer (electronics) , nanotechnology , computer science , electrical engineering , chemistry , computer hardware , organic chemistry , engineering , voltage , metallurgy
We have developed stable and high performance etch‐stopper amorphous indium–gallium–zinc oxide thin‐film transistor (TFT) by using split active oxide semiconductor. The amorphous indium–gallium–zinc oxide TFTs exhibit the mobility as high as over 70 cm 2 /Vs and the stable operation under positive bias temperature stress. In this work, we demonstrated a 4‐in. transparent active‐matrix organic light‐emitting diode display using oxide TFT backplane with split active layer, where the gate driver is integrated.