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Development of 55” 4K UHD OLED TV employing the internal gate IC with high reliability and short channel IGZO TFTs
Author(s) -
Noh Ji Yong,
Han Dong Min,
Jeong Woo Cheol,
Kim Jong Woo,
Cha Soo Youle
Publication year - 2018
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.628
Subject(s) - backplane , thin film transistor , materials science , oled , reliability (semiconductor) , optoelectronics , channel (broadcasting) , amoled , degradation (telecommunications) , computer science , active matrix , computer hardware , telecommunications , nanotechnology , layer (electronics) , physics , power (physics) , quantum mechanics
Abstract We investigated oxide TFT backplane technology to employ the internal gate driver IC (GIP circuit) on 55” 4K OLED TV panel. For the GIP circuit, we developed the high reliability oxide TFTs, especially only ∆0.4 V V th degradation under 100‐h long‐term PBTS stress and the short channel length TFTs ( L = 4.5um) for narrow bezel. Consequently, we demonstrated the 55‐in 4K OLED TV employing the internal gate IC with high reliability and short channel IGZO TFTs.