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Spice model for detection of dynamic threshold voltage shift during failure analysis of oxide TFT‐based AMD gate drivers
Author(s) -
Lee WonSeok,
Mativenga Mallory,
Kang JongSuk,
Tak NamKyun,
Choi InChol,
Kim JinYoung,
Han JiUng,
Choi JinHyung,
Hwang ManGyu
Publication year - 2017
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.615
Subject(s) - thin film transistor , spice , threshold voltage , transistor , computer science , gate driver , voltage , materials science , optoelectronics , electronic engineering , electrical engineering , engineering , nanotechnology , layer (electronics)
Abstract We present an accelerated SmartSpice model that can detect dynamic threshold voltage shift (ΔV th )‐related failure of an oxide thin‐film transistor (TFT)‐based gate driver. During gate driver operation, the alternating HIGH and LOW input signals repeatedly stress and relax the TFT components of the gate driver. Because oxide TFTs do not recover completely during the LOW input level, ΔV th cumulated during the HIGH input levels may result in failure of gate drivers. For correct failure analysis, a TFT model that can detect dynamic ΔV th is, therefore, needed to replace current TFT models, as they cannot account for dynamic ΔV th . The model presented herein works correctly with varying temperature and input signals of any shape.