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Robust integrated shift register circuit over clock noises for in‐cell touch applications
Author(s) -
Seo Jeongrim,
Nam Hyoungsik
Publication year - 2017
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.603
Subject(s) - thin film transistor , computer science , transistor , shift register , node (physics) , threshold voltage , electrical engineering , degradation (telecommunications) , power consumption , voltage , materials science , power (physics) , optoelectronics , electronic engineering , electronic circuit , engineering , physics , layer (electronics) , telecommunications , acoustics , quantum mechanics , composite material
This paper proposes an integrated shift register circuit for an in‐cell touch panel that is robust over clock noises. It is composed of 10 thin film transistors and 1 capacitor, and the time division driving method is adopted to prevent the negative effect of display signals on the touch sensing. Two pre‐charging nodes are employed for reducing the uniformity degradation of gate pulses over time. In particular, the proposed circuit connects a drain of the first pre‐charging node's pull‐up thin film transistor (TFT) to the positive supply voltage instead of clock signals. This facilitates to lower coupling noises as well as to clock power consumption. The simulation program with an integrated circuit emphasis is conducted for the proposed circuit with low temperature poly‐silicon TFTs. The positive threshold voltage that shifts up to 12 V at the first pre‐charging pull‐up TFT can be compensated for without the uniformity degradation of gate pulses. For a 60‐Hz full‐HD display with a 120‐Hz reporting rate of touches, the clock power consumption of the proposed gate driver circuit is estimated as 7.13 mW with 160 stages of shift registers. In addition, the noise level at the first pre‐charging node is lowered to −28.95 dB compared with 2.37 dB of the previous circuit.