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Characteristics improvement of top‐gate self‐aligned amorphous indium gallium zinc oxide thin‐film transistors using a dual‐gate control
Author(s) -
Nag Manoj,
De Roose Florian,
Myny Kris,
Steudel Soeren,
Genoe Jan,
Groeseneken Guido,
Heremans Paul
Publication year - 2017
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.558
Subject(s) - thin film transistor , materials science , optoelectronics , transistor , gate oxide , logic gate , amorphous solid , electrical engineering , nanotechnology , layer (electronics) , voltage , chemistry , crystallography , engineering
In this work, we have reported dual‐gate amorphous indium gallium zinc oxide thin‐film transistors (a‐IGZO TFTs), where a top‐gate self‐aligned TFTs has a secondary bottom gate and the TFT integration comprises only five mask steps. The electrical characteristics of a‐IGZO TFTs under different gate control are compared. With the enhanced control of the channel with two gates connected together, parameters such as on current (I ON ), sub‐threshold slope (SS −1 ), output resistance, and bias‐stress instabilities are improved in comparison with single‐gate control self‐aligned a‐IGZO TFTs. We have also investigated the applicability of the dual‐gate a‐IGZO TFTs in logic circuitry such as 19‐stage ring oscillators.