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Power saving through state retention in IGZO‐TFT AMOLED displays for wearable applications
Author(s) -
Steudel Soeren,
Steen JanLaurens P.J.,
Nag Manoj,
Ke Tung Huei,
Smout Steve,
Bel Thijs,
Diesen Karin,
Haas Gerard,
Maas Joris,
Riet Joris,
Rovers Madelon,
Verbeek Roy,
Huang YenYu,
Chiang ShinChuan,
Ameys Marc,
De Roose Florian,
Dehaene Wim,
Genoe Jan,
Heremans Paul,
Gelinck Gerwin,
Kronemeijer Auke Jisk
Publication year - 2017
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.544
Subject(s) - amoled , thin film transistor , materials science , active matrix , optoelectronics , oled , transistor , pixel , photolithography , backplane , computer science , electrical engineering , layer (electronics) , voltage , computer hardware , nanotechnology , artificial intelligence , engineering
We present a qHD (960 × 540 with three sub‐pixels) top‐emitting active‐matrix organic light‐emitting diode display with a 340‐ppi resolution using a self‐aligned IGZO thin‐film transistor backplane on polyimide foil with a humidity barrier. The back plane process flow is based on a seven‐layer photolithography process with a CD = 4 μm. We implement a 2T1C pixel engine and use a commercial source driver IC made for low‐temperature polycrystalline silicon. By using an IGZO thin‐film transistor and leveraging the extremely low off current, we can switch off the power to the source and gate driver while maintaining the image unchanged for several minutes. We demonstrate that, depending on the image content, low‐refresh operation yields reduction in power consumption of up to 50% compared with normal (continuous) operation. We show that with the further increase in resolution, the power saving through state retention will be even more significant.