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Scalability and homogeneity of slot die‐coated metal oxide semiconductor for TFTs
Author(s) -
Takata Ryo,
Neumann Anita,
Weber Dennis,
Pham DuyVu,
Anselmann Ralf,
Kitamura Yoshitaka,
Kakimura Takashi,
Suzuki Satoshi,
Minami Shigeki,
Kodama Mitsumasa
Publication year - 2016
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.450
Subject(s) - materials science , homogeneity (statistics) , thin film transistor , annealing (glass) , indium , coating , oxide , photoresist , optoelectronics , die (integrated circuit) , scalability , spin coating , transistor , pressing , composite material , nanotechnology , computer science , metallurgy , electrical engineering , layer (electronics) , engineering , database , voltage , machine learning
An indium oxide‐based precursor solution has been developed by spin coating method. In order to apply this material to mass production, material, process, and equipment optimizations for slot die coating have been implemented. Slot die coating is a cost‐effective and scalable process and already applied to photoresist materials in the display industry. The indium oxide‐based precursor solution has been coated on bare glasses and thin‐film transistor substrates by a mass production‐type slot die coater. Mobility of over 10 cm 2 /Vs is achieved for the first time for a large area at an annealing temperature of 350 °C. The homogeneity of the film will be presented.