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Letter : Solution‐processed flexible zinc‐tin oxide thin‐film transistors on ultra‐thin polyimide substrates
Author(s) -
Gao Peixiong,
Lan Linfeng,
Xiao Peng,
Lin Zhenguo,
Sun Sheng,
Li Yuzhi,
Song Wei,
Song Erlong,
Zhang Peng,
Luo Dongxiang,
Xu Miao,
Peng Junbiao
Publication year - 2016
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.438
Subject(s) - polyimide , materials science , thin film , dielectric , optoelectronics , annealing (glass) , thin film transistor , substrate (aquarium) , tin , composite material , layer (electronics) , nanotechnology , metallurgy , oceanography , geology
In this letter, solution‐processed flexible zinc‐tin oxide (Z 0.35 T 0.65 O 1.7 ) thin‐film transistors with electrochemically oxidized gate insulators (AlOx:Nd) fabricated on ultra‐thin (30 µm) polyimide substrates are presented. The AlOx:Nd insulators exhibited wonderful stability under bending and excellent insulating properties with low leakage current, high dielectric constant, and high breakdown field. The device exhibited a mobility of 3.9 cm 2 /V · s after annealing at 300 °C. In addition, the flexible device was able to maintain the electricity performance under various degrees of bending, which was attributed to the ultra‐thin polyimide substrate.