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Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes
Author(s) -
Nakata Mitsuru,
Motomura Genichi,
Nakajima Yoshiki,
Takei Tatsuya,
Tsuji Hiroshi,
Fukagawa Hirohiko,
Shimizu Takahisa,
Tsuzuki Toshimitsu,
Fujisaki Yoshihide,
Yamamoto Toshihiro
Publication year - 2016
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.408
Subject(s) - materials science , thin film transistor , passivation , optoelectronics , oled , layer (electronics) , transistor , fabrication , solution process , electrode , diode , voltage , nanotechnology , electrical engineering , medicine , chemistry , alternative medicine , engineering , pathology
We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm 2 /Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process.