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New pixel circuits for controlling threshold voltage by back‐gate bias voltage using crystalline oxide semiconductor FETs
Author(s) -
Kaneyasu Makoto,
Toyotaka Kouhei,
Shishido Hideaki,
Isa Toshiyuki,
Eguchi Shingo,
Miyake Hiroyuki,
Hirakata Yoshiharu,
Yamazaki Shunpei,
Dobashi Masayoshi,
Fujiwara Chieko
Publication year - 2016
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.406
Subject(s) - threshold voltage , materials science , optoelectronics , transistor , pixel , voltage , biasing , overdrive voltage , electronic circuit , compensation (psychology) , diode , electrical engineering , computer science , engineering , artificial intelligence , psychology , psychoanalysis
We devised a threshold voltage compensation pixel circuit using back‐gate bias voltage. Variation in threshold voltages can be reduced to 10% in simulation while improving the saturation characteristics of a driving transistor. The pixel circuit can compensate not only threshold variation but also mobility variation. We fabricated a 5.29‐in Quad‐VGA organic light emitting diode display using this pixel circuit.