New pixel circuits for controlling threshold voltage by back‐gate bias voltage using crystalline oxide semiconductor FETs | Zendy

Kaneyasu Makoto | Zendy; Toyotaka Kouhei | Zendy; Shishido Hideaki | Zendy; Isa Toshiyuki | Zendy; Eguchi Shingo | Zendy; Miyake Hiroyuki | Zendy; Hirakata Yoshiharu | Zendy; Yamazaki Shunpei | Zendy; Dobashi Masayoshi | Zendy; Fujiwara Chieko | Zendy

Premium

New pixel circuits for controlling threshold voltage by back‐gate bias voltage using crystalline oxide semiconductor FETs

Author(s) -

Kaneyasu Makoto,

Toyotaka Kouhei,

Shishido Hideaki,

Isa Toshiyuki,

Eguchi Shingo,

Miyake Hiroyuki,

Hirakata Yoshiharu,

Yamazaki Shunpei,

Dobashi Masayoshi,

Fujiwara Chieko

Publication year - 2016

Publication title -

journal of the society for information display

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.578

H-Index - 52

eISSN - 1938-3657

pISSN - 1071-0922

DOI - 10.1002/jsid.406

Subject(s) - threshold voltage , materials science , optoelectronics , transistor , pixel , voltage , biasing , overdrive voltage , electronic circuit , compensation (psychology) , diode , electrical engineering , computer science , engineering , artificial intelligence , psychology , psychoanalysis

We devised a threshold voltage compensation pixel circuit using back‐gate bias voltage. Variation in threshold voltages can be reduced to 10% in simulation while improving the saturation characteristics of a driving transistor. The pixel circuit can compensate not only threshold variation but also mobility variation. We fabricated a 5.29‐in Quad‐VGA organic light emitting diode display using this pixel circuit.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research