Characteristics of  a ‐IZO TFTs with high‐κ HfSiO x  gate insulator annealed in various conditions | Zendy

Lim Yoo Seong | Zendy; Im Yong Jin | Zendy; Ha Seung Soo | Zendy; Park Chan Hee | Zendy; Jang Min Hyung | Zendy; Choi Seungil | Zendy; Park Jiin | Zendy; Yi Moonsuk | Zendy

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Characteristics of a ‐IZO TFTs with high‐κ HfSiO x gate insulator annealed in various conditions

Author(s) -

Lim Yoo Seong,

Im Yong Jin,

Ha Seung Soo,

Park Chan Hee,

Jang Min Hyung,

Choi Seungil,

Park Jiin,

Yi Moonsuk

Publication year - 2015

Publication title -

journal of the society for information display

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.578

H-Index - 52

eISSN - 1938-3657

pISSN - 1071-0922

DOI - 10.1002/jsid.323

Subject(s) - materials science , x ray photoelectron spectroscopy , thin film transistor , amorphous solid , hafnium , surface roughness , annealing (glass) , optoelectronics , saturation current , threshold voltage , gate dielectric , analytical chemistry (journal) , thin film , surface finish , equivalent oxide thickness , transistor , gate oxide , voltage , nanotechnology , electrical engineering , composite material , crystallography , metallurgy , nuclear magnetic resonance , zirconium , chemistry , engineering , layer (electronics) , chromatography , physics

In this work, we investigate the enhanced performance of amorphous indium zinc oxides‐based thin film transistors with hafnium silicate (HfSiO x ) gate insulators. HfSiO x gate insulators annealed at various conditions are deposited by cosputtering of hafnium oxide and Si. The structural properties of HfSiO x are investigated using the atomic force microscopy, X‐ray diffraction, and x‐ray photoelectron spectroscopy (XPS). techniques. Furthermore, the electrical characteristics of HfSiO x are analyzed to investigate the effect of annealing conditions. We obtain optimal results for thin film transistors with HfSiO x gate insulators annealed for 1 h at 100 °C, with a saturation mobility of 1.2 cm 2 /V · s, threshold voltage of 2.2 V, on current/off current ratio of 2.0 × 10 6 , and an insulator surface roughness of 0.187 nm root mean square.

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