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Characteristics of a ‐IZO TFTs with high‐κ HfSiO x gate insulator annealed in various conditions
Author(s) -
Lim Yoo Seong,
Im Yong Jin,
Ha Seung Soo,
Park Chan Hee,
Jang Min Hyung,
Choi Seungil,
Park Jiin,
Yi Moonsuk
Publication year - 2015
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.323
Subject(s) - materials science , x ray photoelectron spectroscopy , thin film transistor , amorphous solid , hafnium , surface roughness , annealing (glass) , optoelectronics , saturation current , threshold voltage , gate dielectric , analytical chemistry (journal) , thin film , surface finish , equivalent oxide thickness , transistor , gate oxide , voltage , nanotechnology , electrical engineering , composite material , crystallography , metallurgy , nuclear magnetic resonance , zirconium , chemistry , engineering , layer (electronics) , chromatography , physics
In this work, we investigate the enhanced performance of amorphous indium zinc oxides‐based thin film transistors with hafnium silicate (HfSiO x ) gate insulators. HfSiO x gate insulators annealed at various conditions are deposited by cosputtering of hafnium oxide and Si. The structural properties of HfSiO x are investigated using the atomic force microscopy, X‐ray diffraction, and x‐ray photoelectron spectroscopy (XPS). techniques. Furthermore, the electrical characteristics of HfSiO x are analyzed to investigate the effect of annealing conditions. We obtain optimal results for thin film transistors with HfSiO x gate insulators annealed for 1 h at 100 °C, with a saturation mobility of 1.2 cm 2 /V · s, threshold voltage of 2.2 V, on current/off current ratio of 2.0 × 10 6 , and an insulator surface roughness of 0.187 nm root mean square.