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Back‐channel‐etched thin‐film transistor using c ‐axis‐aligned crystal In–Ga–Zn oxide
Author(s) -
Yamazaki Shunpei,
Hirohashi Takuya,
Takahashi Masahiro,
Adachi Shunsuke,
Tsubuku Masashi,
Koezuka Junichi,
Okazaki Kenichi,
Kanzaki Yohsuke,
Matsukizono Hiroshi,
Kaneko Seiji,
Mori Shigeyasu,
Matsuo Takuya
Publication year - 2014
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.211
Subject(s) - thin film transistor , materials science , crystallinity , amorphous solid , transistor , crystal (programming language) , oxide thin film transistor , optoelectronics , channel (broadcasting) , oxide , layer (electronics) , crystallography , composite material , electrical engineering , computer science , metallurgy , chemistry , engineering , programming language , voltage
Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c ‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c ‐axis alignment, its a ‐axis and b ‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.