Back‐channel‐etched thin‐film transistor using  c ‐axis‐aligned crystal In–Ga–Zn oxide | Zendy

Yamazaki Shunpei | Zendy; Hirohashi Takuya | Zendy; Takahashi Masahiro | Zendy; Adachi Shunsuke | Zendy; Tsubuku Masashi | Zendy; Koezuka Junichi | Zendy; Okazaki Kenichi | Zendy; Kanzaki Yohsuke | Zendy; Matsukizono Hiroshi | Zendy; Kaneko Seiji | Zendy; Mori Shigeyasu | Zendy; Matsuo Takuya | Zendy

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Back‐channel‐etched thin‐film transistor using c ‐axis‐aligned crystal In–Ga–Zn oxide

Author(s) -

Yamazaki Shunpei,

Hirohashi Takuya,

Takahashi Masahiro,

Adachi Shunsuke,

Tsubuku Masashi,

Koezuka Junichi,

Okazaki Kenichi,

Kanzaki Yohsuke,

Matsukizono Hiroshi,

Kaneko Seiji,

Mori Shigeyasu,

Matsuo Takuya

Publication year - 2014

Publication title -

journal of the society for information display

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.578

H-Index - 52

eISSN - 1938-3657

pISSN - 1071-0922

DOI - 10.1002/jsid.211

Subject(s) - thin film transistor , materials science , crystallinity , amorphous solid , transistor , crystal (programming language) , oxide thin film transistor , optoelectronics , channel (broadcasting) , oxide , layer (electronics) , crystallography , composite material , electrical engineering , computer science , metallurgy , chemistry , engineering , programming language , voltage

Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c ‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c ‐axis alignment, its a ‐axis and b ‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.

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