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Instability of light illumination stress on amorphous In–Ga–Zn–O thin‐film transistors
Author(s) -
Park Suehye,
Cho Edward Namkyu,
Yun Ilgu
Publication year - 2013
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.170
Subject(s) - thin film transistor , materials science , optoelectronics , amorphous solid , wavelength , transistor , trapping , stress (linguistics) , instability , thin film , optics , composite material , nanotechnology , voltage , electrical engineering , layer (electronics) , crystallography , chemistry , ecology , linguistics , philosophy , physics , mechanics , biology , engineering
Amorphous In–Ga–Zn–O thin‐film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength‐varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative V GS stresses on amorphous In–Ga–Zn–O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification.