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Highly reliable a‐IGZO TFTs on a plastic substrate for flexible AMOLED displays
Author(s) -
Nakano Shintaro,
Saito Nobuyoshi,
Miura Kentaro,
Sakano Tatsunori,
Ueda Tomomasa,
Sugi Keiji,
Yamaguchi Hajime,
Amemiya Isao,
Hiramatsu Masato,
Ishida Arichika
Publication year - 2012
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.111
Subject(s) - materials science , thin film transistor , amoled , optoelectronics , oled , backplane , polyimide , thin film , flexible display , amorphous solid , annealing (glass) , threshold voltage , active matrix , transistor , voltage , composite material , layer (electronics) , nanotechnology , computer science , electrical engineering , chemistry , organic chemistry , engineering , computer hardware
We have successfully reduced threshold voltage shifts of amorphous In–Ga–Zn–O thin‐film transistors (a‐IGZO TFTs) on transparent polyimide films against bias‐temperature stress below 100 mV, which is equivalent to those on glass substrates. This high reliability was achieved by dense IGZO thin films and annealing temperature below 300 °C. We have reduced bulk defects of IGZO thin films and interface defects between gate insulator and IGZO thin film by optimizing deposition conditions of IGZO thin films and annealing conditions. Furthermore, a 3.0‐in. flexible active‐matrix organic light‐emitting diode was demonstrated with the highly reliable a‐IGZO TFT backplane on polyimide film. The polyimide film coating process is compatible with mass‐production lines. We believe that flexible organic light‐emitting diode displays can be mass produced using a‐IGZO TFT backplane on polyimide films.