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Reliability improvement of IGZO‐TFT in hybrid process with LTPS
Author(s) -
Aman Mehadi,
Takeda Yujiro,
Ito Kazuatsu,
Yamamoto Kaoru,
Tanaka Kohei,
Matsukizono Hiroshi,
Nakamura Wataru,
Makita Naoki
Publication year - 2021
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.1032
Subject(s) - amoled , thin film transistor , backplane , materials science , reliability (semiconductor) , optoelectronics , transistor , inverter , electrical engineering , power (physics) , nanotechnology , active matrix , engineering , physics , layer (electronics) , quantum mechanics , voltage
An AMOLED panel using hybrid backplane technology based on p‐type low temperature polycrystalline silicon (p‐LTPS) and n‐type indium–gallium–zinc–oxide (n‐IGZO) thin‐film transistors (TFTs) has been successfully manufactured. New pixel and Gate‐on‐Array (GOA) circuits were designed and fabricated using this technology. GOA with CMOS inverter is realized by utilizing both IGZO and p‐LTPS. The hybrid backplane AMOLED panel can operate between 1 and 120 Hz, which enables both high refresh rate and low standby power display applications. Furthermore, the AMOLED panel lifetime has markedly enhanced by improving IGZO TFT's uniformity and reliability.