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Micromechanical analysis of silicon nitride: a comparative study by fracture mechanics and Raman microprobe spectroscopy
Author(s) -
Tochino Shigemi,
Pezzotti Giuseppe
Publication year - 2002
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.901
Subject(s) - microprobe , raman spectroscopy , silicon nitride , micromechanics , materials science , fracture (geology) , composite material , ceramic , displacement (psychology) , fracture mechanics , silicon , analytical chemistry (journal) , forensic engineering , mineralogy , metallurgy , chemistry , optics , physics , engineering , psychology , chromatography , composite number , psychotherapist
Raman microprobe spectroscopy was used to characterize in situ microstress fields which develop during fracture of a toughened silicon nitride (Si 3 N 4 ) polycrystal. Maps of microscopic stress were collected in the neighborhood of a propagating crack both at zero and at critical loading conditions. Micromechanics results by Raman spectroscopy were analyzed and compared with conventional fracture mechanics assessments, such as the evaluation of rising R ‐curve behavior and crack opening displacement. Outcomes of these assessments illustrate that, despite the approximations involved in the piezo‐spectroscopic equations used for calculating the microstress field from a local Raman shift, Raman microprobe spectroscopy is a viable method for semi‐quantitative investigations of microfracture mechanisms in advanced ceramic materials. Copyright © 2002 John Wiley & Sons, Ltd.