Raman study of phonons in Ga 1− x  Al  x  As | Zendy

Lockwood D. J. | Zendy; Radomski R. | Zendy; Wasilewski Z. | Zendy

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Raman study of phonons in Ga 1− x Al x As

Author(s) -

Lockwood D. J.,

Radomski R.,

Wasilewski Z.

Publication year - 2002

Publication title -

journal of raman spectroscopy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.748

H-Index - 110

eISSN - 1097-4555

pISSN - 0377-0486

DOI - 10.1002/jrs.851

Subject(s) - raman spectroscopy , phonon , transverse plane , condensed matter physics , materials science , alloy , raman scattering , optics , molecular physics , analytical chemistry (journal) , chemistry , physics , metallurgy , structural engineering , engineering , chromatography

Detailed Raman measurements were performed on the optical phonons in the disordered alloy Ga 1− x Al x As at room temperature. The results obtained are compared with earlier measurements and expressions are given for the Al concentration dependence of the AlAs‐like and GaAs‐like longitudinal and transverse optical modes. Copyright © 2002 John Wiley & Sons, Ltd.

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