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Raman study of phonons in Ga 1− x Al x As
Author(s) -
Lockwood D. J.,
Radomski R.,
Wasilewski Z.
Publication year - 2002
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.851
Subject(s) - raman spectroscopy , phonon , transverse plane , condensed matter physics , materials science , alloy , raman scattering , optics , molecular physics , analytical chemistry (journal) , chemistry , physics , metallurgy , structural engineering , engineering , chromatography
Detailed Raman measurements were performed on the optical phonons in the disordered alloy Ga 1− x Al x As at room temperature. The results obtained are compared with earlier measurements and expressions are given for the Al concentration dependence of the AlAs‐like and GaAs‐like longitudinal and transverse optical modes. Copyright © 2002 John Wiley & Sons, Ltd.