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Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy
Author(s) -
Zanelato G.,
Pusep Yu. A.,
Galzerani J. C.,
Lubyshev D. I.,
GonzálezBorrero P. P.
Publication year - 2001
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.774
Subject(s) - raman spectroscopy , superlattice , raman scattering , k nearest neighbors algorithm , materials science , wavenumber , kinetic energy , analytical chemistry (journal) , layer (electronics) , condensed matter physics , chemistry , molecular physics , optics , optoelectronics , nanotechnology , physics , chromatography , quantum mechanics , artificial intelligence , computer science
A Raman scattering study of cation segregation in GaAs/AlAs ultrathin‐layer superlattices grown with different temperatures and As pressures is reported. The optical confined modes of the samples were measured. The kinetic segregation model was modified in order to allow the calculation of the compositional profiles of the samples. After utilizing the Raman wavenumbers as references to adjust the calculated values by the next‐nearest‐neighbor linear chain model, it was possible to determine the parameters characterizing the segregation. It is shown that an increase in the pressure of As results in a more abrupt compositional profile, equivalent to the decrease in the growth temperature. Copyright © 2001 John Wiley & Sons, Ltd.