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Localized spin‐flip excitations in hexagonal HoMnO 3
Author(s) -
Nam JiYeon,
Kim Seung,
Nguyen Hien Thi Minh,
Chen XiangBai,
Choi MahnSoo,
Lee Daesu,
Noh T.W.,
Yang InSang
Publication year - 2020
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.5969
Subject(s) - spintronics , spins , condensed matter physics , spin (aerodynamics) , ion , population , excitation , spin flip , gallium , spin wave , spin states , materials science , chemistry , scattering , physics , ferromagnetism , optics , demography , organic chemistry , sociology , metallurgy , quantum mechanics , thermodynamics
Growing demands for ultra‐fast switching of spins have turned attention to optically controlled spintronics, which indeed has recently been demonstrated promising. Here we report localized spin‐flip excitations revealed by resonance inelastic light scattering on hexagonal holmium manganite thin films with the magnetic manganese ions substituted by the nonmagnetic gallium ions (HoMn 1 − x Ga x O 3 ). Our analyses on a broad Raman peak support that the corresponding spin excitation is associated with flipping of all three Mn 3+ spins in the elementary trimer of manganese ions and hence maintains the same excitation energy determined by the intrinsic spin–spin interaction between Mn 3+ ions. The nonmagnetic gallium ions only reduce the population of the spin excitations by breaking the spin‐frustrated triangular network. Such localized spin‐flip excitations show another promise towards optically controlled spin devices.