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Effect of doping on the local structure of new block‐layered proton conductors based on BaLaInO 4
Author(s) -
Tarasova N.,
Animitsa I.,
Galisheva A.
Publication year - 2020
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.5966
Subject(s) - doping , oxygen , ionic conductivity , octahedron , ionic bonding , conductivity , materials science , proton , block (permutation group theory) , raman spectroscopy , local structure , acceptor , crystallography , electrical conductor , conductor , vacancy defect , interstitial defect , chemistry , chemical physics , ion , condensed matter physics , crystal structure , electrode , electrolyte , optoelectronics , physics , geometry , optics , organic chemistry , quantum mechanics , mathematics , composite material
In this work, the effect of acceptor of La 3+ ‐sublattice and donor of In 3+ ‐sublattice doping on the local structure of proton conductor BaLaInO 4 with block‐layered Ruddlesden–Popper structure was investigated. It was showed that both types of doping led to appearance of new kinds of the defects (oxygen vacancy and oxygen interstitial) and to the decrease in the tilting angles of [InO 6 ] octahedra due to the expansion of unit cell in the ab direction. The formation of a less distorted structure provided facilitated oxygen‐ionic and protonic transport and increased ionic conductivity.