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Polarization‐dependent anisotropic Raman response of CVD‐grown vertically stacked MoS 2 layers
Author(s) -
Kim Hanul,
Ko Hayoung,
Kim Soo Min,
Rho Heesuk
Publication year - 2020
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.5850
Subject(s) - anisotropy , phonon , raman spectroscopy , polarization (electrochemistry) , chemical vapor deposition , materials science , stacking , monolayer , condensed matter physics , raman scattering , molecular physics , optics , chemistry , optoelectronics , nanotechnology , physics , organic chemistry
We report on the polarized Raman scattering results of vertically stacked few‐layer MoS 2 grown by chemical vapor deposition. Results of monolayer MoS 2 showed that the polarization‐angle‐resolved intensity profiles of both out‐of‐plane A 1g and in‐plane E 2 g 1 phonon modes followed the Raman polarization selection rules. In contrast, the polarization‐angle dependence of the E 2 g 1 phonon intensity in the multilayer region showed a deviation from the polarization selection rules, whereas that of the A 1g phonon intensity remained unchanged regardless of the layer number. Furthermore, the polarization anisotropy of the E 2 g 1 phonon intensity increased with an increase in layer number. The vertically stacked MoS 2 multilayers had oblique, deformed edge boundaries that were not parallel to the basal monolayer edge, suggesting the presence of slight interlayer twisting and/or sliding between neighboring layers. Therefore, we suggest that the polarization‐dependent anisotropic behavior of the E 2 g 1 phonon in the multilayer region is attributed to stacking disorder between MoS 2 layers.