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Raman diagnostics of free charge carriers in boron‐doped silicon nanowires
Author(s) -
Rodichkina S.P.,
Nychyporuk T.,
Pavlikov A.V.,
Lysenko V.,
Timoshenko V.Yu.
Publication year - 2019
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.5702
Subject(s) - raman spectroscopy , materials science , doping , nanowire , charge carrier , boron , silicon , phonon , optoelectronics , nanotechnology , thermoelectric effect , wafer , analytical chemistry (journal) , chemistry , optics , condensed matter physics , physics , organic chemistry , chromatography , thermodynamics
Raman spectroscopy is used to probe free charge carriers in layers of silicon nanowires (SiNWs) formed by metal‐assisted chemical etching of crystalline silicon (c‐Si) wafers followed by additional doping with boron. One‐phonon Raman spectra of the boron‐doped SiNWs are strongly modified due to the Fano effect that allowed us to determine the free carrier concentration in the nanowires in the range from 10 19 to 10 20 cm −3 , depending on the doping conditions. The micro‐Raman mapping was used to determine the depth profile of charge carrier density along nanowires, which decreases toward the SiNWs/c‐Si interface. The obtained results are discussed in view of possible applications of the Raman spectroscopy for express‐diagnostics of doped Si nanostructures for photonics and thermoelectric applications.