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Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C + and He + ions
Author(s) -
Zhang Limin,
Jiang Weilin,
Pan Chenglong,
Fadanelli Raul C.,
Ai Wensi,
Chen Liang,
Wang Tieshan
Publication year - 2019
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.5631
Subject(s) - nanocrystalline material , raman spectroscopy , materials science , amorphous solid , rutherford backscattering spectrometry , irradiation , ion , analytical chemistry (journal) , crystallography , monocrystalline silicon , radiochemistry , nanotechnology , metallurgy , thin film , silicon , chemistry , optics , nuclear physics , physics , organic chemistry , chromatography
This study examines C + and He + ion irradiation‐induced amorphization processes in 3C–SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared with their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation‐induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface‐driven amorphization proceeds at comparable rates for C + and He + ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.