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Unravelling external perturbation effects on the optical phonon response of graphene
Author(s) -
Bendiab Nedjma,
Renard Julien,
Schwarz Cornelia,
ReserbatPlantey Antoine,
Djevahirdjian Léo,
Bouchiat Vincent,
Coraux Johann,
Marty Laëtitia
Publication year - 2018
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.5267
Subject(s) - phonon , graphene , raman spectroscopy , doping , condensed matter physics , materials science , strain engineering , perturbation (astronomy) , nanotechnology , optoelectronics , physics , optics , quantum mechanics , silicon
Raman spectroscopy is a powerful and nondestructive probe that demonstrates its efficiency in revealing the physical properties of low‐dimensional sp 2 carbon systems. It gives access to the number of layers, the quality and the nature of defects of all carbon allotropes, but also to the understanding of the influence of perturbations such as strain and/or doping. In this paper, we review the state of the art regarding the effect of external perturbations on the optical phonons of graphene. We describe how doping can tune the unusual electron–phonon coupling in graphene and thus modify not only the resonance conditions but also the phonon intensities thanks to quantum interferences. We also review the impact of strain on optical phonons and how one can disentangle strain and doping thanks to optical phonons. Last, implementations of this field to strain engineering or to graphene‐based mechanical resonators will be presented. Copyright © 2018 John Wiley & Sons, Ltd.

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