Premium
Spatially‐resolved and polarized Raman scattering from a single Si nanowire
Author(s) -
Park S. Y.,
Rho H.,
Song J. D.,
Lee S.K.,
Kim G.S.,
Lee C. H.
Publication year - 2015
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.4689
Subject(s) - raman spectroscopy , raman scattering , stacking , nanowire , materials science , transmission electron microscopy , scattering , molecular physics , polarization (electrochemistry) , single crystal , optics , condensed matter physics , crystallography , chemistry , nanotechnology , physics , organic chemistry
We report spatially‐resolved and polarized Raman scattering results from a single Si nanowire (NW). Transmission electron microscope images show that the surface morphology of the Si NW varies from smooth to rough along the long axis. As the NW grows, the smooth surface becomes rough because of Au diffusion to the surface, resulting in the formation of facets and stacking faults. Spatially‐resolved Raman spectra along the NW long axis reveal variations in tensile strain related to the morphological changes in NW surface. The tensile strain in the top segment of the NW with a smooth surface is greater than that in the bottom segment with a rough surface. Despite the formation of facets and stacking faults, polarized Raman scattering results both from the top and bottom segments of the NW are consistent with the Raman polarization selection rules expected for a cubic crystal. Copyright © 2015 John Wiley & Sons, Ltd.