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Investigation of the vibrational modes of ZnO grown by MOCVD on different orientation planes
Author(s) -
Jabri S.,
Souissi H.,
Souissi A.,
Meftah A.,
Sallet V.,
Lusson A.,
Galtier P.,
Oueslati M.
Publication year - 2015
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.4617
Subject(s) - metalorganic vapour phase epitaxy , wurtzite crystal structure , raman spectroscopy , sapphire , chemical vapor deposition , thin film , materials science , raman scattering , phonon , substrate (aquarium) , epitaxy , chemistry , optics , optoelectronics , condensed matter physics , zinc , nanotechnology , laser , physics , metallurgy , oceanography , layer (electronics) , geology
Wurtzite ZnO thin films were prepared on sapphire substrate by metal organic chemical vapor deposition (MOCVD). Raman scattering studies on different crystallographic textures were performed in the backscattering geometry, and polarization effect is investigated in different configurations z − −z ¯ and x − −x ¯ . ZnO Raman modes are investigated in each texture. In the case of ZnO thin film deposed on r‐( 11 ‐ 2 2 ) sapphire plane and using backscattering geometry, new Raman line was observed at 390 cm −1 because this mode has not been noticed in this geometry. It is shown that the frequencies of the quasi‐phonon modes of the examined thin film are in good agreement with the theoretical values calculated within the framework of Loudon model. Copyright © 2014 John Wiley & Sons, Ltd.