Premium
Temperature dependence of the Raman line width in diamond: Revisited
Author(s) -
Surovtsev N. V.,
Kupriyanov I. N.
Publication year - 2015
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.4604
Subject(s) - raman spectroscopy , laser linewidth , raman scattering , diamond , impurity , anharmonicity , phonon , line (geometry) , analytical chemistry (journal) , x ray raman scattering , condensed matter physics , spectral line , chemistry , atmospheric temperature range , materials science , optics , physics , thermodynamics , laser , geometry , mathematics , organic chemistry , chromatography , astronomy
Despite more than 60‐year history of Raman scattering studies of diamond, considerable discrepancies between values of the Raman linewidth and its temperature dependence reported by different authors still exist. In this paper we report on the Raman scattering measurements performed for synthetic diamond crystals with nitrogen impurity content below 1 ppm (type IIa) and dislocation density 10 2 –10 3 cm −2 over the temperature range of 50–1000 K. The spectra were recorded with a high spectral resolution (~0.3 cm −1 ) and thoroughly analyzed to account for the instrumental response. The results demonstrate unequivocally that the temperature dependence of the Raman line width is well described by a model which assumes both three‐phonon and four‐phonon anharmonic processes. Elimination of the discrepancies in the line width description advances the Raman scattering technique in the characterization of diamonds with different crystalline quality, defect and/or impurity concentration. Copyright © 2015 John Wiley & Sons, Ltd.