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Electrical field analysis of metal‐surface plasmon resonance using a biaxially strained Si substrate
Author(s) -
Kosemura Daisuke,
Che Mohd Yusoff Siti Norhidayah binti,
Ogura Atsushi
Publication year - 2014
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.4478
Subject(s) - materials science , raman spectroscopy , surface plasmon resonance , polarization (electrochemistry) , transverse plane , excited state , surface plasmon , plasmon , electric field , substrate (aquarium) , raman scattering , metal , field (mathematics) , phonon , optoelectronics , optics , condensed matter physics , chemistry , atomic physics , nanotechnology , physics , nanoparticle , mathematics , oceanography , structural engineering , engineering , quantum mechanics , metallurgy , pure mathematics , geology
Electrical field components of metal‐surface plasmon resonance were analyzed in detail. Both longitudinal optical (LO) and transverse optical (TO) phonon modes of a biaxially strained Si layer can be excited by surface‐enhanced Raman spectroscopy (SERS). The z to y polarization ratio in SERS measurements was calculated to be 0.78 using the intensity ratio of TO to LO phonon modes. The electrical field components of SERS were also calculated by the finite‐difference time‐domain method. Copyright © 2014 John Wiley & Sons, Ltd.