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In‐situ Raman spectroscopy of current‐carrying graphene microbridge
Author(s) -
Choi Minkyung,
Son Jangyup,
Choi Heechae,
Shin HyunJoon,
Lee Sangho,
Kim Sanghoon,
Lee Soogil,
Kim Seungchul,
Lee KwangRyeol,
Kim Sang Jin,
Hong Byung Hee,
Hong Jongill,
Yang InSang
Publication year - 2014
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.4442
Subject(s) - raman spectroscopy , graphene , current density , analytical chemistry (journal) , current (fluid) , materials science , density functional theory , doping , chemistry , nanotechnology , optoelectronics , computational chemistry , optics , physics , chromatography , quantum mechanics , thermodynamics
In‐situ Raman spectroscopy was performed on chemical vapor deposited graphene microbridge (3 μm × 80 μm) under electrical current density up to 2.58 × 10 8 A/cm 2 in ambient conditions. We found that both the G and the G′ peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up‐shift of the G peak and the G′ peak, after switching off the electrical current, is believed to be due to p‐doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C–O and C=O bond components in the C1 s spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p‐doping according to our density functional theory calculation of the electronic structure. Copyright © 2014 John Wiley & Sons, Ltd.