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Influence of the buffer layer properties on the intensity of Raman scattering of graphene
Author(s) -
Dyakov S. A.,
Perova T. S.,
Miao C. Q.,
Xie Y.H.,
Cherevkov S. A.,
Baranov A. V.
Publication year - 2013
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.4294
Subject(s) - raman spectroscopy , graphene , buffer (optical fiber) , raman scattering , layer (electronics) , materials science , intensity (physics) , substrate (aquarium) , refractive index , optics , optoelectronics , nanotechnology , physics , telecommunications , oceanography , geology , computer science
Using a model of oscillating dipoles, we simulate the intensity of the G‐band in the Raman signal from structures consisting of graphene, separated by an arbitrary buffer layer from a substrate. It is found that a structure with an optimized buffer layer refractive index and thickness exhibits a Raman signal which is nearly 50 times more intense than that from the same structure with a non‐optimized buffer layer. The theoretical simulations are verified by Raman measurements on structures consisting of a layer of graphene on SiO 2 and Al 2 O 3 buffer layers. The optical contrast of the single graphene layer is calculated for an arbitrary buffer layer. It was found that both the Raman intensity and optical contrast can be maximized by varying the buffer layer thickness. Copyright © 2013 John Wiley & Sons, Ltd.