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Triply resonant Raman scattering in perovskite semiconductor CsSnI 3
Author(s) -
Yu Chonglong,
Chen Zhuo,
Shum Kai
Publication year - 2013
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.4180
Subject(s) - semiconductor , raman scattering , phonon , raman spectroscopy , perovskite (structure) , chemistry , intensity (physics) , order (exchange) , conduction band , scattering , optics , line (geometry) , condensed matter physics , optoelectronics , materials science , crystallography , physics , geometry , quantum mechanics , economics , electron , finance , mathematics
We report on the first‐order and second‐order Raman scattering (SORS) by longitudinal optical (LO) phonons in perovskite semiconductor CsSnI 3 . The intensity of SORS is stronger than that of the first order. The spectral line shape of SORS is asymmetric and much broader than that of the first order. It is identified that the strong SORS intensity is attributable to the triply enhanced resonant process, which is naturally implemented through the peculiar band structure of this semiconductor compound having two adjacent parallel conduction bands with a separation close to the energy of two LO phonons. Copyright © 2012 John Wiley & Sons, Ltd.