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Imaging of internal stress around a mineral inclusion in a sapphire crystal: application of micro‐Raman and photoluminescence spectroscopy
Author(s) -
Noguchi Naoki,
Abduriyim Ahmadjan,
Shimizu Ichiko,
Kamegata Nanako,
Odake Shoko,
Kagi Hiroyuki
Publication year - 2013
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.4161
Subject(s) - sapphire , zircon , raman spectroscopy , photoluminescence , crystal (programming language) , hydrostatic pressure , materials science , stress (linguistics) , internal stress , cauchy stress tensor , mineralogy , analytical chemistry (journal) , composite material , optics , chemistry , optoelectronics , geology , laser , thermodynamics , physics , geochemistry , linguistics , philosophy , classical mechanics , chromatography , computer science , programming language
We developed a micro‐Raman and photoluminescence imaging technique for visualizing the internal stress fields in a sapphire crystal. The technique was applied to an Australian sapphire gemstone with a zircon inclusion. Considering piezospectroscopic effects on Raman and photoluminescence spectra, the Raman shifts of sapphire around the zircon inclusion were converted to hydrostatic pressure and deviatoric components of stress tensor. The internal stress was highly concentrated at the tips of the zircon crystal, where the deviatoric stress and the hydrostatic pressure component reached 700 and 470 MPa, respectively. Generation of compressive stress on the crystal surface of zircon can be explained by the difference in thermal expansion coefficients and elastic constants between sapphire and zircon. In general, internal stress fields induced by mineral inclusions reflect the pressure and temperature conditions at which the host sapphire gemstones were crystallized. Thus, the present technique can be utilized to identify the origin of gemstones. Copyright © 2012 John Wiley & Sons, Ltd.