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Study on solid structure of pentacene thin films using Raman imaging
Author(s) -
Seto Keisuke,
Furukawa Yukio
Publication year - 2012
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.4090
Subject(s) - raman spectroscopy , pentacene , materials science , thin film , phase (matter) , excited state , layer (electronics) , analytical chemistry (journal) , optoelectronics , optics , chemistry , nanotechnology , physics , organic chemistry , chromatography , nuclear physics , thin film transistor
We present a 532‐nm excited Raman imaging study of pentacene thin films (thickness, 2, 5, 10, 20, 50, 100, and 150 nm) prepared on an SiO 2 surface. The structure of the pentacene films has been investigated by images and histograms of the ratio ( R ) of intensity of the 1596‐cm −1 band ( b 3g ) to that of the 1533‐cm −1 band ( a g ), which can be used as a marker of solid‐state phases: 1.54‐nm and 1.44‐nm phases. The Raman images showed that island‐like 1.44‐nm phase domains are grown on the 1.54‐nm phase layer from 50 nm, and all the surface of the 1.54‐nm phase layer is covered with the 1.44‐nm phase layer from 100 nm. The structural disorders have been discussed on the basis of the full width at half maximum of a band in the histogram of the R values for each film. Copyright © 2012 John Wiley & Sons, Ltd.