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Investigation of stress and structural damage in H and He implanted Ge using micro‐Raman mapping technique on bevelled samples
Author(s) -
Wasyluk J.,
Rainey P. V.,
Perova T. S.,
Mitchell S. J. N.,
McNeill D. W.,
Gamble H. S.,
Armstrong B. M.,
Hurley R.
Publication year - 2012
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.3052
Subject(s) - raman spectroscopy , spreading resistance profiling , materials science , germanium , acceptor , wafer , ion implantation , hydrogen , analytical chemistry (journal) , ion , doping , optoelectronics , chemistry , silicon , optics , physics , organic chemistry , chromatography , condensed matter physics
The results on structural damage in germanium wafers caused by hydrogen and helium implants of typical doses used in Smart Cut™ Technology (1–6 × 10 16 atoms/cm 2 ) are investigated using Raman mapping and spreading resistance profiling techniques. Raman line‐mapping measurements were performed up to the depth of ~400 nm into a Ge substrate (well beyond the limit of visible light penetration depth) using a bevelling technique. From analysis of the Ge–Ge Raman peak it was found that implantation of H and He introduced a different type of stress, tensile and compressive, respectively and significant structural damage with maximum at the projected range. The obtained data shows that hydrogen incorporation in Ge can act as an acceptor. This is undesirable when the hydrogen ion‐cut technology is applied to high resistivity Ge. The crystalline structure after implantation is completely recovered when annealed at 600 °C for both types of implants. Spreading resistance profiling results reveal that 4−8x10 15 acceptors/cm 3 remain after 600 °C, and these are thought to be because of vacancy related defect clusters. Copyright © 2011 John Wiley & Sons, Ltd.