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Fano resonance in heavily doped porous silicon
Author(s) -
Pusep Y. A.,
Rodrigues A. D.,
BorreroGonzález L. J.,
Acquaroli L. N.,
Urteaga R.,
Arce R. D.,
Koropecki R. R.,
Tirado M.,
Comedi D.
Publication year - 2011
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.2870
Subject(s) - fano resonance , raman scattering , raman spectroscopy , porous silicon , doping , condensed matter physics , silicon , resonance (particle physics) , materials science , molecular physics , scattering , chemistry , atomic physics , physics , optoelectronics , plasmon , optics
Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the SiSiO 2 interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. Copyright © 2011 John Wiley & Sons, Ltd.