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Identification of Mn‐related Raman modes in Mn‐doped ZnO thin films
Author(s) -
Hu Y. M.,
Wang C. Y.,
Lee S. S.,
Han T. C.,
Chou W. Y.,
Chen G. J.
Publication year - 2011
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.2695
Subject(s) - raman spectroscopy , dopant , doping , thin film , materials science , analytical chemistry (journal) , sputter deposition , manganese , mineralogy , sputtering , nanotechnology , chemistry , optoelectronics , optics , metallurgy , physics , chromatography
This article aims to investigate the Raman modes present in Mn‐doped ZnO thin films that are deposited using the magnetron co‐sputtering method. A broad band ranging from 500 to 590 cm −1 is present in the Raman spectra of heavily Mn‐doped ZnO films. The multi‐peak‐fitting results show that this broad band may be composed of six peaks, and the peak at 528 cm −1 could be a characteristic mode of Mn 2 O 3 . The results of this study suggest that the origin of the Raman peaks in Mn‐doped ZnO films may be due to three major types: structural disorder and morphological changes caused by the Mn dopant, Mn‐related oxides and intrinsic host‐lattice defects. Copyright © 2010 John Wiley & Sons, Ltd.