Identification of Mn‐related Raman modes in Mn‐doped ZnO thin films | Zendy

Hu Y. M. | Zendy; Wang C. Y. | Zendy; Lee S. S. | Zendy; Han T. C. | Zendy; Chou W. Y. | Zendy; Chen G. J. | Zendy

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Identification of Mn‐related Raman modes in Mn‐doped ZnO thin films

Author(s) -

Hu Y. M.,

Wang C. Y.,

Lee S. S.,

Han T. C.,

Chou W. Y.,

Chen G. J.

Publication year - 2011

Publication title -

journal of raman spectroscopy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.748

H-Index - 110

eISSN - 1097-4555

pISSN - 0377-0486

DOI - 10.1002/jrs.2695

Subject(s) - raman spectroscopy , dopant , doping , thin film , materials science , analytical chemistry (journal) , sputter deposition , manganese , mineralogy , sputtering , nanotechnology , chemistry , optoelectronics , optics , metallurgy , physics , chromatography

This article aims to investigate the Raman modes present in Mn‐doped ZnO thin films that are deposited using the magnetron co‐sputtering method. A broad band ranging from 500 to 590 cm −1 is present in the Raman spectra of heavily Mn‐doped ZnO films. The multi‐peak‐fitting results show that this broad band may be composed of six peaks, and the peak at 528 cm −1 could be a characteristic mode of Mn 2 O 3 . The results of this study suggest that the origin of the Raman peaks in Mn‐doped ZnO films may be due to three major types: structural disorder and morphological changes caused by the Mn dopant, Mn‐related oxides and intrinsic host‐lattice defects. Copyright © 2010 John Wiley & Sons, Ltd.

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