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Raman probe to estimate surface energies of embedded semiconductor nanostructures
Author(s) -
Dhara S.,
Magudapathy P.,
Nair K. G. M.,
Raj Baldev
Publication year - 2010
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.2506
Subject(s) - nanoclusters , nanocrystalline material , semiconductor , raman spectroscopy , materials science , nanostructure , annealing (glass) , phonon , nanocrystal , ion , nanotechnology , analytical chemistry (journal) , optoelectronics , condensed matter physics , chemistry , optics , composite material , physics , organic chemistry , chromatography
Embedded semiconductor nanoclusters (nc‐) of GaN, Si and InN were grown using the ion‐implantation technique and subsequent annealing. Detailed phonon properties were studied for the identification of the grown phases as well as to estimate the stress developed in these embedded structures. The surface energies of the embedded nanoclusters were calculated in analogy with the stressed spherical nanoclusters and excess pressure in a liquid drop. The estimated surface energies for nc‐GaN ∼4 Nm −1 , nc‐InN ∼2.7 Nm −1 and nc‐Si ∼1.4 Nm −1 are discussed in the light of possible phase transition in the nanocrystalline systems. Copyright © 2009 John Wiley & Sons, Ltd.