Premium
The effect of vacuum annealing on graphene
Author(s) -
Ni Zhen Hua,
Wang Hao Min,
Luo Zhi Qiang,
Wang Ying Ying,
Yu Ting,
Wu Yi Hong,
Shen Ze Xiang
Publication year - 2010
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.2485
Subject(s) - graphene , raman spectroscopy , annealing (glass) , doping , materials science , adsorption , nanotechnology , graphene nanoribbons , ultra high vacuum , graphene oxide paper , optoelectronics , chemistry , optics , composite material , physics
The effect of vacuum annealing on the properties of graphene is investigated by using Raman spectroscopy and electrical measurement. Heavy hole doping on graphene with concentration as high as 1.5 × 10 13 cm −2 is observed after vacuum annealing and exposed to an air ambient. This doping is due to the H 2 O and O 2 adsorption on graphene, and graphene is believed to be more active to molecular adsorption after annealing. Such observation calls for special attention in the process of fabricating graphene‐based electronic devices and gas sensors. On the other hand, because the quality of graphene remains high after the doping process, this would be an efficient and controllable method to introduce heavy doping in graphene, which would greatly help on its application in future electronic devices. Copyright © 2009 John Wiley & Sons, Ltd.