Premium
Multiphonon resonant Raman scattering in N‐doped ZnO
Author(s) -
Zhu Xiaming,
Wu Huizhen,
Yuan Zijian,
Kong Jinfang,
Shen Wenzhong
Publication year - 2009
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.2385
Subject(s) - raman scattering , raman spectroscopy , doping , phonon , x ray raman scattering , condensed matter physics , scattering , materials science , impurity , phonon scattering , optics , molecular physics , chemistry , physics , organic chemistry
Multiphonon resonant Raman scattering in N‐doped ZnO films was studied, and an enhancement of the resonant Raman scattering process as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed at room temperature. The resonant Raman scattering intensity of the 1LO phonon in N‐doped ZnO appears three times as strong as that of undoped ZnO, which mainly arises from the defect‐induced Raman scattering caused by N‐doping. The nature of the 1LO phonon at 578 cm −1 is interpreted as a quasimode with mixed A 1 and E 1 symmetry because of the defects formed in the ZnO lattice. In addition, the previously neglected impurity‐induced two‐LO‐phonon scattering process was clearly observed in N‐doped ZnO. Copyright © 2009 John Wiley & Sons, Ltd.