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Temperature‐depending Raman line‐shift of silicon carbide
Author(s) -
Bauer Michael,
Gigler Alexander M.,
Huber Andreas J.,
Hillenbrand Rainer,
Stark Robert W.
Publication year - 2009
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.2334
Subject(s) - raman spectroscopy , phonon , materials science , atmospheric temperature range , liquid nitrogen , silicon carbide , anisotropy , wavenumber , molecular physics , analytical chemistry (journal) , silicon , full width at half maximum , crystal (programming language) , optics , condensed matter physics , chemistry , optoelectronics , physics , organic chemistry , chromatography , meteorology , computer science , metallurgy , programming language
Silicon carbide (SiC) is often used for electronic devices operating at elevated temperatures. Spectroscopic temperature measurements are of high interest for device monitoring because confocal Raman microscopy provides a very high spatial resolution. To this end, calibration data are needed that relate Raman line‐shift and temperature. The shift of the phonon wavenumbers of single crystal SiC was investigated by Raman spectroscopy in the temperature range from 3 to 112°C. Spectra were obtained in undoped 6HSiC as well as in undoped and nitrogen‐doped 4HSiC. All spectra were acquired with the incident laser beam oriented parallel as well as perpendicular to the c ‐axis to account for the anisotropy of the phonon dispersion. Nearly all individual peak centers were shifting linearly towards smaller wavenumbers with increasing temperature. Only the peak of the longitudinal optical phonon A 1 (LO) in nitrogen‐doped 4HSiC was shifting to larger wavenumbers. For all phonons, a linear dependence of the Raman peaks on both parameters, temperature and phonon frequency, was found in the given temperature range. The linearity of the temperature shift allows for precise spectroscopic temperature measurements. Temperature correction of Raman line‐shifts also provides the ability to separate thermal shifts from mechanically induced ones. Copyright © 2009 John Wiley & Sons, Ltd.