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Raman characterization before and after rapid thermal annealing of CeO 2 thin films grown by rf sputtering on (111) Si
Author(s) -
Guhel Y.,
Ta M. T.,
Bernard J.,
Boudart B.,
Pesant J. C.
Publication year - 2009
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.2140
Subject(s) - raman spectroscopy , materials science , annealing (glass) , thin film , sputtering , atmospheric temperature range , sputter deposition , analytical chemistry (journal) , nanotechnology , optics , chemistry , metallurgy , physics , chromatography , meteorology
We investigated by Raman spectroscopy (RS) the crystalline quality of CeO 2 thin films radio frequency magnetron sputtered on n‐type (111) Si substrates from CeO 2 target. The deposition temperature was in the range of 200–800 °C. We also realized structural investigations on CeO 2 layers after Rapid Thermal Annealing (RTA) performed in the range of 750–1000 °C for 30 s under nitrogen atmosphere. So this study displays that a high‐growth temperature and a high post‐growth‐RTA temperature improves the crystalline structure of the film. In fact, the best crystalline quality, which is close to the CeO 2 target taken as a reference, is obtained for a CeO 2 layer deposited at 800 °C and post‐annealed at 1000 °C for 30 s. Copyright © 2008 John Wiley & Sons, Ltd.