Raman characterization before and after rapid thermal annealing of CeO 2  thin films grown by rf sputtering on (111) Si | Zendy

Guhel Y. | Zendy; Ta M. T. | Zendy; Bernard J. | Zendy; Boudart B. | Zendy; Pesant J. C. | Zendy

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Raman characterization before and after rapid thermal annealing of CeO 2 thin films grown by rf sputtering on (111) Si

Author(s) -

Guhel Y.,

Ta M. T.,

Bernard J.,

Boudart B.,

Pesant J. C.

Publication year - 2009

Publication title -

journal of raman spectroscopy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.748

H-Index - 110

eISSN - 1097-4555

pISSN - 0377-0486

DOI - 10.1002/jrs.2140

Subject(s) - raman spectroscopy , materials science , annealing (glass) , thin film , sputtering , atmospheric temperature range , sputter deposition , analytical chemistry (journal) , nanotechnology , optics , chemistry , metallurgy , physics , chromatography , meteorology

We investigated by Raman spectroscopy (RS) the crystalline quality of CeO 2 thin films radio frequency magnetron sputtered on n‐type (111) Si substrates from CeO 2 target. The deposition temperature was in the range of 200–800 °C. We also realized structural investigations on CeO 2 layers after Rapid Thermal Annealing (RTA) performed in the range of 750–1000 °C for 30 s under nitrogen atmosphere. So this study displays that a high‐growth temperature and a high post‐growth‐RTA temperature improves the crystalline structure of the film. In fact, the best crystalline quality, which is close to the CeO 2 target taken as a reference, is obtained for a CeO 2 layer deposited at 800 °C and post‐annealed at 1000 °C for 30 s. Copyright © 2008 John Wiley & Sons, Ltd.

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