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Theory and experiment of large numerical aperture objective Raman microscopy: application to the stress‐tensor determination in strained cubic materials
Author(s) -
Ossikovski Razvigor,
Nguyen Quang,
Picardi Gennaro,
Schreiber Joachim,
Morin Pierre
Publication year - 2008
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1911
Subject(s) - raman spectroscopy , cauchy stress tensor , numerical aperture , microelectronics , materials science , laser linewidth , stress (linguistics) , characterization (materials science) , phonon , tensor (intrinsic definition) , silicon on insulator , silicon , optics , semiconductor , condensed matter physics , physics , optoelectronics , nanotechnology , mathematics , geometry , classical mechanics , laser , wavelength , linguistics , philosophy
We present the theory underlying the large numerical aperture objective micro‐Raman backscattering experiment and apply it to the elaboration of a characterization methodology for the determination of the stress tensor in strained cubic semiconductor structures. The presented stress characterization technique consists in monitoring the variations of the stress‐sensitive optical phonon peak position and linewidth while rotating stepwise the sample about its normal. The practical application of the technique is illustrated on a silicon‐on‐insulator (SOI) microelectronic structure demonstrating a plane stress‐tensor determination. Copyright © 2008 John Wiley & Sons, Ltd.