Premium
Aperture based Raman spectroscopy on SiGe film structures with high spatial resolution
Author(s) -
Mai A.,
Zhu L.,
Hecker M.,
Rinderknecht J.,
Georgi C.,
Ritz Y.,
Zschech E.
Publication year - 2008
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1852
Subject(s) - raman spectroscopy , materials science , optics , silicon , diffraction , resolution (logic) , spectroscopy , laser , coherent anti stokes raman spectroscopy , microscope , optoelectronics , raman scattering , physics , quantum mechanics , artificial intelligence , computer science
We have investigated silicon–germanium (SiGe) line structures employing metallic apertures in combination with Raman spectroscopy to obtain high‐spatial strain resolution below the diffraction limit. The apertures were cut into specifically shaped electrochemically etched tungsten tips, which were adjusted within the Raman laser beam on the sample surface by a tuning fork atomic force microscope. With this setup, line structures on patterned SiGe films with a center‐to‐center distance down to 200 nm were resolved in the Raman scans, evidently indicating a resolution clearly below the far‐field Raman resolution of about 600 nm for the used instrument. This setup allows improved local strain analysis by Raman spectroscopy and shows potential for further near‐field Raman applications. Copyright © 2008 John Wiley & Sons, Ltd.