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Study of strain and wetting phenomena in porous silicon by Raman scattering
Author(s) -
Ferrara M. A.,
Donato M. G.,
Sirleto L.,
Messina G.,
Santangelo S.,
Rendina I.
Publication year - 2008
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1846
Subject(s) - raman spectroscopy , wetting , porous silicon , materials science , silicon , porosity , raman scattering , substrate (aquarium) , wetting layer , composite material , porous medium , strain (injury) , optics , optoelectronics , medicine , oceanography , physics , geology
Abstract In this paper, porous silicon (PS) layers of different porosity and thickness have been investigated by Raman spectroscopy. The estimation of built‐in strain in PS is reported. Moreover, wetting phenomena in PS layers have been also investigated. The results prove a reversible blue shift of Raman spectra of wetted PS layers with respect to unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the PS layer and the bulk silicon substrate in wetting conditions. Copyright © 2008 John Wiley & Sons, Ltd.