z-logo
Premium
MREI‐model calculations of Raman‐active modes in layered mixed crystals TiS 2− x Se x (0≤ x ≤2)
Author(s) -
Garg A. K.
Publication year - 2008
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1842
Subject(s) - raman spectroscopy , chemistry , phase transition , work (physics) , crystal (programming language) , phase (matter) , thermodynamics , analytical chemistry (journal) , wavenumber , electrical resistivity and conductivity , force constant , physics , molecule , optics , quantum mechanics , organic chemistry , chromatography , computer science , programming language
A modified random‐element isodisplacement model has been developed and used to calculate the concentration dependence of the wavenumbers of Raman‐active modes in mixed crystal system, TiS 2− x Se x (0≤ x ≤2). Earlier theoretical work, based on the Jaswal model, predicted a phase transition in this system on cooling up to 125 K temperature for the composition x ≥ 1.2. But recently reported resistivity measurements did not find the existence of any phase transition for a composition x < 1.4 on cooling. Our calculations show these findings and give remarkably better fitting to Raman data. The estimated values of the force constants are found to lie generally in the range 10 5 –10 6 amu cm −2 . Copyright © 2007 John Wiley & Sons, Ltd.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom