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Raman scattering of nanoporous semiconductors
Author(s) -
Irmer Gert
Publication year - 2007
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1703
Subject(s) - raman scattering , raman spectroscopy , phonon , semiconductor , nanoporous , nanometre , condensed matter physics , materials science , charge carrier , scattering , porous medium , plasmon , nanotechnology , chemistry , porosity , optics , optoelectronics , physics , composite material
The application of Raman scattering for characterizing porous semiconductors is reviewed. For structural units of only a few nanometers in size, as observed in por‐Si or por‐Ge, phonon confinement effects appear that can be used for size determinations. In polar porous semiconductors, surface‐related phonons (Fröhlich modes) between the TO and LO phonons appear. These surface phonons couple with the plasmons of free charge carriers in the porous medium. Examples are given of porous layers on III–V semiconductors in which Raman scattering is used to study charge carrier depletion. For theoretical treatment, the effective medium theory is used, taking into account the morphology with parallel pores or nanocolumns with radii down to a few tens of nanometers. Copyright © 2007 John Wiley & Sons, Ltd.