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High contrast scanning nano‐Raman spectroscopy of silicon
Author(s) -
Lee N.,
Hartschuh R. D.,
Mehtani D.,
Kisliuk A.,
Maguire J. F.,
Green M.,
Foster M. D.,
Sokolov A. P.
Publication year - 2007
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1698
Subject(s) - raman spectroscopy , optics , silicon , materials science , polarization (electrochemistry) , nanoscopic scale , coherent anti stokes raman spectroscopy , spectroscopy , nano , optoelectronics , raman scattering , nanotechnology , chemistry , physics , quantum mechanics , composite material
We have demonstrated that scanning nano‐Raman spectroscopy (SNRS), generally known as tip‐enhanced Raman spectroscopy (TERS), with side illumination optics can be effectively used for analysis of silicon‐based structures at the nanoscale. Even though the side illumination optics has disadvantages such as difficulties in optical alignment and shadowing by the tip, it has the critical advantage that it may be used for the analysis of nontransparent samples. A key criterion for making SNRS effective for imaging Si samples is the optimization of the contrast between near‐field and far‐field (background) Raman signals. This has been achieved by optimizing the beam polarization, resulting in an order of magnitude improvement in the contrast. We estimate the lateral resolution of our Raman images to be ∼20 nm. Copyright © 2007 John Wiley & Sons, Ltd.