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Raman scattering characterization of well‐aligned IrO 2 nanocrystals grown on sapphire substrates via reactive sputtering
Author(s) -
Korotcov Alexandru,
Hsu HungPin,
Huang YingSheng,
Tsai DahShyang
Publication year - 2006
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1564
Subject(s) - raman spectroscopy , sapphire , raman scattering , nanocrystal , sputtering , characterization (materials science) , materials science , analytical chemistry (journal) , full width at half maximum , chemistry , crystallography , nanotechnology , optics , thin film , optoelectronics , laser , physics , chromatography
Raman spectroscopy (RS) was used for the characterization of well‐aligned IrO 2 nanocrystals (NCs) grown on sapphire substrates with different orientations via reactive magnetron sputtering. Three Raman‐active modes, E g , B 2 g and A 1 g , were observed in the range 500–800 cm −1 . The intensity of certain modes depended on the orientation of NCs and followed the selection rules reasonably well. The result indicates the possibility of determining the preferred growth direction of NCs using RS. Raman spectra show red shifts and peak broadening of the IrO 2 signatures with respect to those of the bulk counterpart. The red shifts and asymmetric broadening of the Raman line shapes of the NCs were analyzed by a modified spatial correlation (MSC) model, which included a factor of stress‐induced shift. The MSC model showed that the effects of stress and nanometric size could be separated by analyzing the observed Raman features. The usefulness of experimental RS together with the MSC model analysis as a structural and residual stress characterization technique for NCs is demonstrated. Copyright © 2006 John Wiley & Sons, Ltd.